? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 50 a i dm t c = 25 c, pulse width limited by t jm 200 a i a t c = 25 c50a e as t c = 25 c5j dv/dt i s i dm , v dd v dss , t j 150c 20 v/ns p d t c = 25 c 1135 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 800 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 160 m IXFN50N80Q2 either source terminal s can be used as the source terminal or the kelvin source ( gate return ) terminal. ds99028c(01/10) minibloc, sot-227 e153432 g d s s g = gate d = drain s = source features z international standard package z minibloc, with aluminium nitride isolation z isolation voltage 2500 v~ z high current handling capability z fast intrinsic rectifier z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z switch-mode and resonant-mode power supplies >500khz switching z dc-dc converters z dc choppers z pulse generation z laser drivers hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr v dss = 800v i d25 = 50a r ds(on) 160m t rr 300ns
ixys reserves the right to change limits, test conditions, and dimensions. IXFN50N80Q2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b (ixfn) outline (m4 screws (4x) supplied) note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 32 48 s c iss 13.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1180 pf c rss 213 pf t d(on) 26 ns t r 25 ns t d(off) 60 ns t f 13 ns q g(on) 260 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 56 nc q gd 120 nc r thjc 0.11 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 50 a i sm repetitive, pulse width limited by t jm 200 a v sd i f = 50a, v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.1 c i rm 8.0 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 25a, v gs = 0v -di/dt = 100a/ s v r = 100v
? 2010 ixys corporation, all rights reserved IXFN50N80Q2 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 012345678 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 5 v 6v fig. 4. r ds(on) normalized to i d = 25a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 50a i d = 25a fig. 5. r ds(on) normalized to i d = 25a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090100110 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFN50N80Q2 fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance 0.200 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.20.40.60.81.01.21.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 q g - nanocoulombs v gs - volts v ds = 400v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss ixys ref:f_50n80q2(95)1-18-10-c
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